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| Rev3: Nov 2004 AOD410, AOD410L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AOD410 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. AOD410L( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 8A RDS(ON) < 65m (VGS = 10V) RDS(ON) < 105m (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C B Maximum 30 20 8 6 20 8 10 25 12.5 2.1 1.33 -55 to 175 Units V V A A mJ W W C TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25C Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C Symbol t 10s Steady-State Steady-State RJA RJL Typ 20 46 5.3 Max 30 60 7 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD410, AOD410L Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=2A Forward Transconductance VDS=5V, ID=8A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, V GS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=8A TJ=125C 1 10 48 76 75 6.2 0.75 1 4.3 288 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 57 39 3 6.72 VGS=10V, V DS=15V, ID=8A 3.34 0.76 1.78 3.7 VGS=10V, V DS=15V, R L=1.8, RGEN=3 IF=8A, dI/dt=100A/s IF=8A, dI/dt=100A/s 2 Min 30 Typ Max Units V 1 5 100 1.8 3 65 100 105 A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge 3.7 15.6 2.6 12.6 5.1 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD410, AOD410L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10V 8V 5V 6V 4.5V 8 VDS=5V 10 15 ID (A) 10 3.5V 5 VGS=3V 0 0 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 1 5 ID(A) 4 4V 6 125C 25C 2 0 1.5 2 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 2.5 4.5 100 90 RDS(ON) (m) 80 70 60 50 40 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 175 150 125 RDS(ON) (m) 100 ID=8A 125C IS (A) Normalized On-Resistance VGS=4.5V 2 1.8 1.6 1.4 1.2 1 VGS=10V ID=8A VGS=4.5V VGS=10V 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 1.0E-02 125C 25C 1.0E-03 75 25C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER M 1.0E-04 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZ 50 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES 1.0E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 20 46 5.3 0.2 0.4 7 1.2 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOD410, AOD410L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=15V ID=8A 8 Capacitance (pF) VGS (Volts) 500 400 Ciss 300 6 4 200 Coss 100 Crss 2 0 0 1 4 5 6 7 Qg (nC) Figure 7: Gate-Charge Characteristics 2 3 8 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 100.0 30 TJ(Max)=150C TA=25C 10.0 ID (Amps) RDS(ON) limited 100s 10ms 0.1s 1.0 TJ(Max)=150C TA=25C 1s 10s DC 0 0.001 Power (W) 1ms 10s 20 10 0.01 0.1 1 10 100 1000 0.1 0.1 1 10 V Forward Figure 9: MaximumDS (Volts) Biased Safe Operating Area (Note F) 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER M COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZ Single Pulse OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 20 46 5.3 PD Ton 7T 100 1000 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. |
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